Secondary electron emission from GaAs

Abstract

Secondary emission measurements have been made on thick and thin epitaxially grown p-doped GaAs. Reflection mode gains of 400 at primary voltages of 20 kV have been observed for unthinned layers. The variation of gain with white-light photoresponse has also been measured. For 5-μ-thick self-supporting layers, a gain of 115 and 30 (at 10 kV primary voltage) has been measured for the reflection and transmission modes, respectively. The escape depth is estimated to be 2 μ with an escape probability of 0.14.