Applied Physics Letters · 1970 · 63 citations · 9 references
Natural SciencesMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceOptoelectronic MaterialsPhotoelectron SpectroscopyElectron AffinityElectron Escape DepthEscapeEscape DynamicsSilicon
Infrared photoemission from p-type silicon has been observed with a threshold of 1.1 eV. The surface of the sample has been activated to a state of effective negative electron affinity. The escape depth for thermal photoelectrons is 5.5μ (microns) and surface escape probability is 0.18.
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GaAs-Cs: A new type of photoemitter
Jens Scheer · Solid State Communications · 1965 · 273 citations
R. E. Simon, B. F. Williams · IEEE Transactions on Nuclear Science · 1968 · 256 citations
H. E. Farnsworth, R. E. Schlier, T. George et al. · Journal of Applied Physics · 1958 · 220 citations
Natural Sciences, Materials Engineering, Materials Science +17
Photoelectronic Materials and Devices
Students Quarterly Journal · 1966 · 59 citations
Thermal Generation of Recombination Centers in Silicon
B. Ross, John R. Madigan · Physical Review · 1957 · 53 citations