Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO₂/NiO as Gate Dielectric

Abstract

AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) with thick <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$({&gt;}{\rm 35}~{\rm nm})$</tex></formula> , high- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\kappa~({\rm TiO}_{{2}}/{\rm NiO})$</tex> </formula> , submicrometer-footprint (0.4 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> ) gate dielectric are found to exhibit two orders of magnitude in lower gate leakage current ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">${\sim}{\rm 1}~{\rm nA}/{\rm mm}$</tex></formula> up to <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${+}{\rm 3}\hbox{-}{\rm V}$</tex></formula> applied gate bias), higher <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$I_{\rm{MAX}}$</tex></formula> (709 mA/mm), and higher drain breakdown voltage, compared to Schottky barrier (SB) HEMTs of the same geometry. The maximum extrinsic transconductance of both the MOSHEMTs and the SBHEMTs with <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$2\times80\hbox{-}\mu{\rm m}$</tex></formula> gate fingers is measured to be 149 mS/mm. The addition of the submicrometer-footprint gate oxide layer only results in a small reduction of the current gain cutoff frequency (21 versus 25 GHz, derived from <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$S$</tex></formula> -parameter test data) because of the high permittivity <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(\kappa\approx 100)$</tex></formula> of the gate dielectric. This high-performance submicrometer-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems.