Defect-controlled generation in deeply depleted MOS-C structures

Abstract

A model and supporting experimental evidence are presented to explain the nonlinear carrier generation rate versus semiconductor depletion width dependence which is frequently observed in the course of carrier generation lifetime (τ0) measurements. Experimental observations indicate a direct correlation between the occurrence of the nonlinear generation rate exhibited by MOS-C structures and a large Si defect concentration, thereby suggesting that, when the defect concentration is large, the carrier generation rate within a structure is totally dominated by enhanced generation from bulk centers positioned in the vicinity of defect sites.