Interfacial roughness and related growth mechanisms in sputtered W/Si multilayers

Abstract

We have studied interfacial roughness in amorphous W/Si multilayers grown by rf sputtering at different deposition parameters by cross-sectional transmission electron microscopy, x-ray reflectivity, and diffuse x-ray scattering. The diffuse scattering intensity has been recorded in an unprecedented wide range of parallel momentum transfer, 5\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}4}$ A${\mathrm{\r{}}}^{\mathrm{\ensuremath{-}}1}$\ensuremath{\leqslant}${\mathit{q}}_{\mathrm{\ensuremath{\parallel}}}$\ensuremath{\leqslant}1 A${\mathrm{\r{}}}^{\mathrm{\ensuremath{-}}1}$, giving access to the height-height self- and cross-correlation functions on lateral length scales between a few \AA{} and 1 \ensuremath{\mu}m. The results are compared for the different samples and discussed in view of the deposition parameters. \textcopyright{} 1996 The American Physical Society.