Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature

Study of interface asymmetry in InAs–GaSb heterojunctions

M. W. Wang, D. A. Collins, T. C. McGill et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 51 citations · Full text

Natural Sciences, Materials Science, Physics +17

Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers

James D. Harper, Michael Weimer, D. Zhang et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 41 citations

Natural Sciences, Materials Science, Physics +17

In situ composition control of III-As1 − xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometry

R. Kaspi, William T. Cooley, K. R. Evans · Journal of Crystal Growth · 1997 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +14

Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions

R. M. Feenstra, D. A. Collins, T. C. McGill · Superlattices and Microstructures · 1994 · 16 citations

Natural Sciences, Materials Science, Physics +14