<scp>WSXM</scp>: A software for scanning probe microscopy and a tool for nanotechnology

Ignacio Horcas, Robert Fernandez, José M. Gómez‐Rodríguez, +3

Review of Scientific Instruments

EngineeringMicroscopyBiomedical EngineeringMicroscopy MethodNanometrology +14

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying, R. Averbeck, L. F. Chen, +3

Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorEpitaxial GrowthEngineeringPhysics +13

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Wei Guo, Meng Zhang, Animesh Banerjee, +1

Nano Letters

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa, B. Heying, Xuemei Wu, +3

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringSemiconductorsMocvd-grown TemplateGa Fluxes +14

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi

Applied Physics Letters

EngineeringLuminescence PropertyEmission Color ControlSame SubstrateNanoelectronics +15

Growth of Self-Organized GaN Nanostructures on Al₂O₃(0001) by RF-Radical Source Molecular Beam Epitaxy

Masaki Yoshizawa, Akihiko Kikuchi, Masashi Mori, +2

Japanese Journal of Applied Physics

Materials ScienceHigh DensityAluminium NitrideEngineeringNanotechnology +9

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

M. A. Sánchez-Garcı́a, E. Calleja, E. Monroy, +4

Journal of Crystal Growth

Materials ScienceAluminium NitrideElectrical EngineeringEngineeringSurface Science +7

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Katsumi Kishino, Hiroto Sekiguchi, Akihiko Kikuchi

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanomaterials +6

InGaN/GaN nanorod array white light-emitting diode

Hon-Way Lin, Yu‐Jung Lu, Hung-Ying Chen, +2

Applied Physics Letters

EngineeringOptoelectronic DevicesSemiconductorsElectronic DevicesNanoelectronics +16

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

Hiroto Sekiguchi, Katsumi Kishino, Akihiko Kikuchi

Applied Physics Express

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanomaterials +12