IEEE Transactions on Microwave Theory and Techniques · 2004 · 23 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice ModelingMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesRadio-frequency Integrated CircuitsBase ResistanceBipolar Junction Transistor NoiseBipolar Junction Transistor Small-signal ModelsEquivalent Circuit ModelingLow-frequency ModelingMicrowave Noise CharacterizationNoise Parameter ExtractionNoise Parameters
Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5/spl times/5 /spl mu/m/sup 2/ emitter area over a wide range of bias points.
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Sorin P. Voinigescu, M.C. Maliepaard, J.L. Showell et al. · IEEE Journal of Solid-State Circuits · 1997 · 337 citations · Full text
Noise modeling of microwave heterojunction bipolar transistors
L. Escotte, J.P. Roux, R. Plana et al. · IEEE Transactions on Electron Devices · 1995 · 76 citations
An HBT noise model valid up to transit frequency
Matthias Rudolph, Ralf Doerner, L. Klapproth et al. · IEEE Electron Device Letters · 1999 · 72 citations