Journal of The Electrochemical Society · 1965 · 119 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsImpurity ProfilingSemiconductor MaterialsDevice CharacterizationDopingSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesSurface OxidationOxidationOxidation KineticsSemiconductor OxidationSiliconSilicon DopingSilicon ImpuritiesSilicon OxidationThermal Oxidation
The redistribution of impurities during thermal oxidation of silicon has been investigated using the metal‐oxide‐semiconductor (MOS) system. It has been demonstrated that the MOS technique permits a semiquantitative observation of both n‐ and p‐type impurity profiles in the silicon surface region. Results are presented for redistribution of aluminum, boron, gallium, indium, antimony, arsenic, and phosphorus. In addition, the effects of oxidation variables (oxidation time, temperature, rate, and ambient) on redistribution, predicted by previous work in these laboratories, have been studied in detail for boron‐doped silicon.