GaN Quantum Dots Grown on Silicon for Free-Standing Membrane Photonic Structures

Abstract

We report the growth by molecular beam epitaxy of GaN quantum dots (QDs) embedded in very thin (Al,Ga)N layers grown very close to the silicon substrate interface. Morphological and optical properties as a function of both temperature and excitation power are investigated respectively by atomic force microscopy and photoluminescence. Room temperature photoluminescence from GaN QDs grown in the vicinity of the silicon substrate interface is very promising regarding the fabrication of GaN-based UV light sources using free-standing membrane photonic structures.