IEEE Transactions on Nuclear Science · 1984 · 73 citations · 17 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityRadiation Damage In MaterialsRadiation HardeningSemiconductor ReliabilityGate Oxide DegradationHole TransportInvertersRadiation Damage EffectsRadiation EffectsRadiation-hard DevicesRadiation-hardened Integrated CircuitsRadiation-tolerant Semiconductor Devices
Recent results on hardened and unhardened CMOS inverters are analyzed. New experimental results indicate that lateral hole transport promotes a large interface state buildup in n-channel devices irradiated with the gate grounded. Other prompt results can be explained by recombination models. Annealing results in hardened oxides can be predicted using linear systems theory.
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