Patterning of Narrow Au Nanocluster Lines Using V₂O₅ Nanowire Masks and Ion-Beam Milling

Abstract

A shadow mask technique employing V2O5 nanowires and ion-beam milling is used to define narrow lines of monolayer-encapsulated Au nanoclusters. When positioned between electrodes these lines are shown to be conducting and to have nonlinear I−V characteristics with nonzero threshold voltages consistent with Coulomb blockade.