Electronics Letters · 1994 · 114 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationMetal-semiconductor ContactsSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCurrent-voltage RelationsFermi LevelFermi Level PinningFermi SurfaceGallium Nitride (Gan) MaterialsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barriers
The Schottky barrier height of Ti on n-type GaN has been measured to be 0.58 and 0.59 eV by capacitance-voltage and current-voltage techniques, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than that of Au. This supports the prediction that the Fermi level is not pinned at the GaN surface.
9
Low resistance ohmic contacts on wide band-gap GaN
Mao Lin, Zhenqiang Ma, Fengyi Huang et al. · Applied Physics Letters · 1994 · 438 citations
Metal contacts to gallium nitride
James Foresi, T. D. Moustakas · Applied Physics Letters · 1993 · 330 citations