Applied Physics Letters · 1985 · 26 citations · 11 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyDefectsDefects In Electronic MaterialsRadiation Damage In MaterialsRaman SpectroscopySemiconductor DefectsSemiconductor PhysicsDefect PhysicsElectronic DefectsElectronic Structure Of DefectsIntrinsic DefectsPoint DefectsRadiation DefectsSemiconductor CharacterizationVibrational Modes
We report Raman scattering measurements in GaAs that has been damaged by irradiation with either high-energy electrons or neutrons. We observe new and relatively sharp peaks which are attributed to vibrational modes of intrinsic point defects, most likely an As vacancy.
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Submillimeter EPR evidence for the As antisite defect in GaAs
R. J. Wagner, J. J. Krebs, G. H. Stauss et al. · Solid State Communications · 1980 · 205 citations
Natural Sciences, Materials Science, Electronic Materials +11