Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAs

Abstract

Strong electron spin resonance spectra of the As4+Ga antisite defect have been observed in fast neutron-irradiated GaAs. Both in originally n-type and p-type materials the defect introduction is ≲3 cm−1. Thermal annealing of the AsGa defect occurs between 450 and 500 °C. This annealing stage is also characteristic for the recovering of electrical conductivity and infrared transparency of GaAs after particle irradiation and ion implantation. It is suggested that these phenomena are microscopically explained by thermal annihilation of antisite defects.