Concepedia

Zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si substrates

John C. C. Fan, B-Y. Tsaur, R. L. Chapman, M. W. Geis

Applied Physics Letters · 1982 · 33 citations · 6 references

DOI

Concepts

Abstract

We have constructed a scaled-up graphite strip-heater system that permits routine zone-melting recrystallization of 3-in.-diam Si films on SiO2-coated Si wafers. The recrystallized films are similar in crystal quality to those obtained previously in a smaller system, except that they contain higher densities of small protrusions along the subgrain boundaries. Seeded recrystallization has been accomplished by scribing a stripe opening, that extends through the Si and SiO2 films to the Si wafer.

References

6

Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators

John C. C. Fan, M. W. Geis, Bor-Yeu Tsaur · Applied Physics Letters · 1981 · 133 citations

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MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate

E. W. Maby, M. W. Geis, Y.L. LeCoz et al. · IEEE Electron Device Letters · 1981 · 99 citations

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Zone-melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallography

M. W. Geis, Henry I. Smith, B-Y. Tsaur et al. · Applied Physics Letters · 1982 · 90 citations

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Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification

B-Y. Tsaur, John C. C. Fan, M. W. Geis et al. · Applied Physics Letters · 1981 · 57 citations

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Subgrain boundaries in laterally seeded silicon-on-oxide formed by graphite strip heater recrystallization

Russell F. Pinizzotto, Hon Wai Lam, B. L. Vaandrager · Applied Physics Letters · 1982 · 49 citations

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