Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators - Concepedia

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Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators

10

Citations

4

References

2011

Year

P.‐Y. Chan, Mukesh Gogna, E. Suarez, Supriya Karmakar, F. Al-Amoody, B.I. Miller, F. Jain

Journal of Electronic Materials

References

	Year	Citations

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