Publication | Closed Access
Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue on Si by Using an O2 Plasma Treatment
11
Citations
0
References
2008
Year
Chemical EngineeringSelective EtchingEngineeringMicrofabricationSurface ScienceApplied PhysicsPlasma EtchingChemistrySilicon On InsulatorMicroelectronicsO2 Plasma TreatmentPlasma ProcessingEtch Residue
No additional data available for this publication yet. Check back later!