Sungho Heo - Concepedia

Author

Sungho Heo

Gwangju Institute of Science and Technology ORCID

Also Known As

Heo, Seongsoo, S. H. Heo, S. Heo, Seongsoo Heo, Seong‐Wook Heo, Su Min Heo, Sung-Ho Heo, SungHo Heo, Sungho Heo

Publications

511

Citations

H-Index

Concepts

All Affiliations

Gwangju Institute of Science and Technology Sungkyunkwan University Samsung (South Korea)

About

Sungho Heo is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	432
2	Applied Physics	9	9	432
3	Electrical Engineering	4	4	118
4	Chemical Engineering	1	1	11
5	Chemistry	1	1	11

Sungho Heo

Publications

444

Citations

H-Index

Page 1

	Year	Citations
Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures Rui Dong, D. S. Lee, Wang Xiang, Applied Physics Letters Materials ScienceSemiconductorsMaterials EngineeringRoom TemperatureEngineering	2007	188
Improvement of reproducible hysteresis and resistive switching in metal-La0.7Ca0.3MnO3-metal heterostructures by oxygen annealing Rui Dong, Wang Xiang, D. S. Lee, Applied Physics Letters Materials ScienceOxide HeterostructuresMaterials EngineeringRoom TemperatureEngineering	2007	62
The effect of excimer laser annealing on ZnO nanowires and their field effect transistors Jongsun Maeng, Sungho Heo, Gunho Jo, Nanotechnology Materials ScienceIi-vi SemiconductorElectrical EngineeringNanoscale SystemEngineering	2009	52
Sub-15 nm n[sup +]∕p-Germanium Shallow Junction Formed by PH[sub 3] Plasma Doping and Excimer Laser Annealing Sungho Heo, Sungkweon Baek, Dongkyu Lee, Electrochemical and Solid-State Letters Wide-bandgap SemiconductorEngineeringLaser ApplicationsPlad SamplesOptoelectronic Devices	2006	44
Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory Rui Dong, Dohaeng Lee, M. B. Pyun, Applied Physics A Materials ScienceCurrent HysteresisEngineeringApplied PhysicsCondensed Matter Physics	2008	40
Ultrashallow (&lt;10nm) p+∕n junction formed by B18H22 cluster ion implantation and excimer laser annealing Sungho Heo, Hyunsang Hwang, H. T. Cho, Applied Physics Letters EngineeringLaser ApplicationsLaser MaterialOptoelectronic DevicesIntegrated Circuits	2006	13
Study on fiber laser welding conditions for the fabrication of a nuclear fuel rod Jintae Hong, Chang-Young Joung, Ka-Hye Kim, International Journal of Precision Engineering and Manufacturing	2014	12
Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam Sung Woo Kim, Byoung Jae Park, Se Koo Kang, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringLayer ThicknessEngineering	2008	11
Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue on Si by Using an O2 Plasma Treatment K. S. Min, B. J. Park, Sang‐Woo Kim, Journal of the Korean Physical Society Chemical EngineeringSelective EtchingEngineeringMicrofabricationSurface Science	2008	11
Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing Musarrat Hasan, Min Seok Jo, Md. Shahriar Rahman, Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringElectrical EngineeringElectrical CharacteristicsPost-deposition Annealing	2006	11

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