Sub-15 nm n[sup +]∕p-Germanium Shallow Junction Formed by PH[sub 3] Plasma Doping and Excimer Laser Annealing

Abstract

An germanium (Ge) ultrashallow junction formed by plasma doping (PLAD) and KrF excimer laser annealing is demonstrated. In order to improve the n-type dopant activation without significant diffusion in the junction, we applied laser annealing on the PLAD samples. Compared with rapid thermal annealing (RTA), the laser annealing yielded shallower junction depth with low sheet resistance and comparable leakage current characteristics in the Ge junction. Therefore, PLAD with laser annealing can be considered as an alternative method for fabricating future Ge metal-oxide-semiconductor field-effect-transistors.