Physical Review · 1963 · 35 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationDopingElectrical ConductivitySemiconductor Device MaterialsSemiconductor PhysicsCarrier ConcentrationCarrier Transport In SemiconductorsConductionElectrical Transport PropertiesFermi LevelHall EffectSeebeck CoefficientSemiconductor Characterization
Measurements of resistivity, Hall constant, and Seebeck coefficient have established that CsAu is an $n$-type semiconductor with carrier concentrations ${10}^{18}$-${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$. The carrier concentration is essentially independent of temperature over the range 4.2-300\ifmmode^\circ\else\textdegree\fi{}K and the mobility is 30-60 ${\mathrm{cm}}^{2}$${\mathrm{V}}^{\ensuremath{-}1}$ ${\mathrm{sec}}^{\ensuremath{-}1}$. It is suggested that excess cesium introduces an impurity band which overlaps the conduction band. The Seebeck coefficient (-0.023 mV/\ifmmode^\circ\else\textdegree\fi{}K at 300\ifmmode^\circ\else\textdegree\fi{}K) indicates that the Fermi level lies about 0.02 eV above the conduction band based on optical lattice scattering.
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