The doped Si/SiO2 interface

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Engineering, Electrical Engineering, Physics +12

Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

Andrew S. Grove, B. E. Deal, E. H. Snow et al. · Solid-State Electronics · 1965 · 416 citations

Engineering, Materials Engineering, Materials Science +14

Surface recombination in semiconductors

D.J. Fitzgerald, Andrew S. Grove · Surface Science · 1968 · 221 citations

Natural Sciences, Materials Engineering, Materials Science +17

Si-SiO[sub 2] Fast Interface State Measurements

D.M. Brown, Peter V. Gray · Journal of The Electrochemical Society · 1968 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping

A. Goetzberger, J.C. Irvin · IEEE Transactions on Electron Devices · 1968 · 95 citations

Engineering, Electrical Engineering, Materials Science +17