In situ annealing of GaN dot structures grown by droplet epitaxy on (1 1 1) Si substrates

Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

B. Daudin, F. Widmann, G. Feuillet et al. · Physical review. B, Condensed matter · 1997 · 382 citations

Engineering, Materials Engineering, Materials Science +17

From visible to white light emission by GaN quantum dots on Si(111) substrate

B. Damilano, N. Grandjean, F. Sèmond et al. · Applied Physics Letters · 1999 · 284 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Self-assembling GaN quantum dots on Al<i>x</i>Ga1−<i>x</i>N surfaces using a surfactant

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi · Applied Physics Letters · 1996 · 274 citations

Natural Sciences, Materials Engineering, Materials Science +17

X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

Scott D. Wolter, B. P. Luther, D. L. Waltemyer et al. · Applied Physics Letters · 1997 · 241 citations

Natural Sciences, Materials Engineering, Materials Science +16

High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Miharu Miyamura, Kota Tachibana, Yasuhiko Arakawa · Applied Physics Letters · 2002 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17