Electron mobility in heavily doped gallium arsenide

Abstract

The effects of electron-electron scattering and nonparabolic energy band shape on electron mobility in degenerate materials are investigated. Mobility calculations as a function of electron concentration and temperature are compared to experimental data. Electron-electron scattering is found to only slightly reduce electron mobility. The nonparabolic band shape is found to significantly reduce the magnitude and alter the temperature dependence of electron mobility.