Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Natural Sciences, Materials Engineering, Materials Science +14

Variation of the critical layer thickness with In content in strained In<i>x</i>Ga1−<i>x</i>As-GaAs quantum wells grown by molecular beam epitaxy

T. G. Andersson, Z. G. Chen, V. D. Kulakovskiĭ et al. · Applied Physics Letters · 1987 · 247 citations

Engineering, Materials Engineering, Materials Science +17

Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh, M. A. Capano, L. W. Hobbs et al. · Journal of Applied Physics · 1988 · 207 citations

Natural Sciences, Materials Science, Physics +17

Determination of critical layer thickness in In<i>x</i>Ga1−<i>x</i>As/GaAs heterostructures by x-ray diffraction

P. J. Orders, B. F. Usher · Applied Physics Letters · 1987 · 198 citations

Natural Sciences, Materials Engineering, Materials Science +17

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

P. L. Gourley, I. J. Fritz, L. R. Dawson · Applied Physics Letters · 1988 · 163 citations

Natural Sciences, Materials Science, Physics +17