Investigation of a New High Sensitive Micro-Electromechanical Strain Gauge Sensor Based on Graphene Piezoresistivity

Abstract

A new strain gauge based on graphene piezoresistivity was fabricated by a novel low cost technique which suits mass production of micro piezoresistor sensors. The strain gauge consists of a monolayer graphene film made by chemical vapor deposition on a copper foil surface, and transferred to Si/SiO 2 surface by using a polymethyl-methacrylate (PMMA) assisted transfer method. The film is shaped by laser machine to work as a conductive-piezoresistive material between two deposited electrical silver electrodes. This method of fabrication provides a high productivity due to the homogeneous distribution of the graphene monolayer all over the Si/SiO 2 surface. The experimentally measured gauge factor of graphene based device is 255, which promises a new strain gauge sensor of high sensitivity.