Wafer-Scale Synthesis and Transfer of Graphene Films

TLDR

The study aims to produce wafer‑scale, high‑quality graphene films on Ni and Cu substrates under ambient pressure and transfer them onto arbitrary substrates via instantaneous metal etching, and to demonstrate their use in batch‑fabricated FET arrays and stretchable strain gauges. The authors develop a method that yields 3‑inch wafer‑size graphene films and transfers them onto arbitrary substrates through instantaneous etching of the metal layers. The resulting devices exhibit hole and electron mobilities of 1,100 cm²/Vs and 550 cm²/Vs, a strain gauge factor of ~6.1, and represent a significant step toward wafer‑scale graphene devices for optoelectronics, flexible and stretchable electronics.

Abstract

We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.