1971 · 59 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringComputer ArchitectureMicroelectronicsSemiconductor DevicesCmos Circuit DesignMemory DevicesMemory Subsystem DesignMetal-oxide-semiconductor Field-effect TransistorsCmos Digital Circuit DesignMemory Circuit DesignMemory Circuits
A novel MOS charge storage transistor developed for an electrically-programmable ROM will be described. The memory element is a fully-decoded 2048-bit silicon gate MOS chip that provides access times of 500 ns (dynamic mode) or 800 ns (static mode).
5
L. Vadasz, Andrew S. Grove, Tyler Rowe et al. · IEEE Spectrum · 1969 · 85 citations
Engineering, Computer Engineering, Electrical Engineering +16
READ-ONLY memory using MAS transistors
S. Nakanuma, T. Tsujide, Ryo Igarashi et al. · IEEE Journal of Solid-State Circuits · 1970 · 29 citations
Engineering, Computer Engineering, Electrical Engineering +11
A new MNOS charge storage effect
H.G. Dill, T.N. Toombs · Solid-State Electronics · 1969 · 22 citations
Natural Sciences, Materials Engineering, Materials Science +9