Proceedings of the IEEE · 1969 · 18 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignIntegrated Circuit DesignMemory DevicesMemory HierarchyMemory Subsystem DesignMemristive MaterialsMemory Circuit DesignMemristive MemoryNanoelectronic Memory DevicesNon-volatile Cmos MemoryNon-volatile Memory DesignNonvolatile MemoryNonvolatile Memory DevicesSilicon Nitride
A nonvolatile integrated metal-nitride-oxide-silicon (MNOS) word organized memory was fabricated. The salient features of this integrated storage array are 1) WRITE cycle 2.0 microseconds, READ cycle 500 nanoseconds, 2) WRITE voltage ± 25V, 3) single device per storage bit, 4) MOS driving circuitry with no isolation between MOS and MNOS devices on the same chip, and 5) nonvolatile storage of information.
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