H.A.R. Wegener

Chemically Bound Hydrogen in CVD Si3 N 4: Dependence on  NH 3 / SiH4 Ratio and on Annealing

H. J. Stein, H.A.R. Wegener · Journal of The Electrochemical Society · 1977 · 83 citations

Engineering, Vibrational Modes, Optoelectronic Devices +18

The variable threshold transistor, a new electrically-alterable, non-destructive read-only storage device

H.A.R. Wegener, Abraham Lincoln, H.C. Pao et al. · 1967 · 73 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +13

CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT

F. A. Sewell, H.A.R. Wegener, E.T. Lewis · Applied Physics Letters · 1969 · 57 citations

Device Modeling, Mi2i1s Device, Electrical Engineering +14

Steady-state characteristics of two terminal inversion-controlled switches

H. Kröger, H.A.R. Wegener · Solid-State Electronics · 1978 · 44 citations

Electrical Engineering, Engineering, Steady-state Characteristics +3

Bistable impedance states in MIS structures through controlled inversion

H. Kröger, H.A.R. Wegener · Applied Physics Letters · 1973 · 43 citations · Full text

Electrical Engineering, Semiconductor Device, Engineering +15