READ-ONLY memory using MAS transistors

CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENT

F. A. Sewell, H.A.R. Wegener, E.T. Lewis · Applied Physics Letters · 1969 · 57 citations

Device Modeling, Mi2i1s Device, Electrical Engineering +14

Properties of Aluminum Oxide Obtained by Hydrolysis of AlCl[sub 3]

T. Tsujide, S. Nakanuma, Yutaka Ikushima · Journal of The Electrochemical Society · 1970 · 36 citations

Materials Science, Aluminium Nitride, Material Analysis +11

Switching and storage characteristics of MIS memory transistors

J. T. Wallmark, J.H. Scott · IEEE Transactions on Electron Devices · 1969 · 27 citations

Electrical Engineering, Engineering, Physics +13