Strained single quantum well InGaAs lasers with a threshold current of 0.25 mA

Abstract

Strained layer single quantum well InGaAs lasers with a record low threshold current of 1 mA for as-cleaved facets and 0.25 mA with high reflectivity coated facets have been demonstrated. In addition, these lasers display a weak dependence of threshold current, quantum efficiency, and lasing wavelength on cavity length in comparison with those single quantum well lasers previously reported.