Electronics Letters · 1982 · 62 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesLaser DiodesSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDiode Laser Threshold CurrentExternal Quantum EfficiencyHeterostructure LasersLow-threshold Current LasersPower OutputQuantum EfficiencySemiconductor Laser DiodesThreshold Behavior
Ultra-low-threshold semiconductor diode lasers were fabricated by forming buried heterostructures from MBE-grown graded-index waveguide, separate-confinement heterostructure (GRIN-SCH) wafers. CW threshold currents as low as 2.5 mA for 250 μm cavity length, output power as high as 20 mW/mirror and external quantum efficiency as high as 80% were obtained.
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