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Ultralow threshold multiquantum well InGaAs lasers

41

Citations

7

References

1992

Year

Abstract

Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.

References

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