Applied Physics Letters · 1989 · 36 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsOptical Properties Of SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsHeterojunctionsPhotoluminescencePhotoluminescence In Quantum WellsQuantum Size EffectsQuantum Well HeterostructuresQuantum Well StructuresSemiconductor HeterojunctionsValence Band Structure
Photoluminescence in ZnSe/GaAs/Al0.4Ga0.6As single quantum well heterostructures is reported for the first time. These structures are grown by migration-enhanced epitaxy, resulting in flat and abrupt ZnSe/GaAs heterointerfaces. The quantum size effect is clearly observed. Photoluminescence intensities of ZnSe/GaAs/Al0.4Ga0.6As single quantum well structures are comparable to those of Al0.4Ga0.6As/GaAs/Al0.4Ga0.6As, indicating a reasonable quality of the ZnSe layer as well as the ZnSe/GaAs heterojunctions. From the GaAs well width dependence of photoluminescence wavelength, the conduction- and valence-band-edge discontinuities are estimated to be 0.03–0.05 eV and 1.21–1.23 eV, respectively.
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Coherent Growth of ZnSe on GaAs by MOCVD
Hiroshi Mitsuhashi, Iwao Mitsuishi, M. Mizuta et al. · Japanese Journal of Applied Physics · 1985 · 169 citations
Wide gap II-VI superlattices of ZnSe-Zn1−<i>x</i>Mn<i>x</i>Se
L. A. Kolodziejski, R. L. Gunshor, T. C. Bonsett et al. · Applied Physics Letters · 1985 · 102 citations