EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNanoelectronicsRadio-frequency Integrated CircuitsSemiconductor Device MaterialsGallium Nitride Microwave Integrated CircuitsHigh-electron-mobility TransistorsHigh-frequency ElectronicsMicrowave DevicesMillimeter-wave Integrated CircuitsMmic OscillatorsRadio-frequency DevicesTerahertz Semiconductor Devices
In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest gain greater than 15 dB (greater than 5 dB per stage) at 340 GHz.
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On-Wafer Vector Network Analyzer Measurements in the 220-325 GHz Frequency Band
A. Fung, Douglas Dawson, Lorene Samoska et al. · 2006 · 32 citations
InP HEMT amplifier development for G-band (140-220 GHz) applications
R. Lai, M. Barsky, R. Grundbacher et al. · 2002 · 32 citations
Metamorphic H-Band Low-Noise Amplifier MMICs
A. Tessmann, Arnulf Leuther, H. Massler et al. · 2007 · 29 citations