Concepedia

Publication | Closed Access

Fabrication of InP HEMT devices with extremely high Fmax

DOI

39

Citations

5

References

2008

Year

R. Lai, W.R. Deal, X. B. Mei, Wayne Yoshida, J. Lee, Linh Dang, J. Wang, Y. M. Kim, P.H. Liu, V. Radisic,

Unknown Venue

Abstract

In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest gain greater than 15 dB (greater than 5 dB per stage) at 340 GHz.

References

YearCitations

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