Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates

VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

Ricarda Wagner, W. C. Ellis · Applied Physics Letters · 1964 · 6.7K citations

Natural Sciences, Materials Science, Physics +9

Growth and optical properties of nanometer-scale GaAs and InAs whiskers

K. Hiruma, M. Yazawa, T. Katsuyama et al. · Journal of Applied Physics · 1995 · 632 citations

Engineering, Materials Engineering, Materials Science +17

Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxy

Sixu Xin, P. D. Wang, Aie Yin et al. · Applied Physics Letters · 1996 · 337 citations

Natural Sciences, Materials Engineering, Materials Science +17

Large scale surface structure formed during GaAs (001) homoepitaxy

Christine A. Orme, Matthew D. Johnson, J. Sudijono et al. · Applied Physics Letters · 1994 · 137 citations · Full text

Natural Sciences, Materials Science, Physics +17

Kinetic surface roughening in molecular beam epitaxy of InP

M. A. Cotta, R. A. Hamm, Thomas W. Staley et al. · Physical Review Letters · 1993 · 117 citations

Natural Sciences, Materials Engineering, Materials Science +17