Physical Review Letters · 1983 · 157 citations · 13 references
Natural SciencesPhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyElectronic Band StructureMagnetism In SolidsSemiconductor InterfacesSemiconductor PhysicsTwo-dimensional SemiconductorsElectron MobilityInterband TransitionsLandau LevelsMagnetism In Two-dimensional SemiconductorsTwo-dimensional Electron GasesTwo-dimensional Electron SystemsTwo-dimensional Semiconductor Interfaces
Anti-level-crossing of Landau and the electric subband levels is observed in the high-mobility two-dimensional electron gas at the GaAs/(GaAl)As interface. Coupling between the electron motion parallel and perpendicular to the interface is due to a small parallel component of magnetic field. This novel subband spectroscopic technique determines the electric subband transition energy in this two-dimensional electron system.
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Electronic properties of two-dimensional systems
Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations
Natural Sciences, Chemistry, Physics +16
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations
A.Y. Cho, John R. Arthur · Progress in Solid State Chemistry · 1975 · 1.2K citations
Two-dimensional electron gas at a semiconductor-semiconductor interface
H. L. Störmer, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1979 · 448 citations