Electronics Letters · 1981 · 14 citations · 3 references
Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsBias Temperature InstabilityApplied PhysicsTemperature DependenceTemperature EffectChannel Active LayerMicroelectronicsIon-implanted Gaas MesfetsOptoelectronicsSemiconductor Device
The temperature dependence of the characteristics of ion-implanted GaAs MESFETs has been studied. The observed effects are mainly due to the p-n-junction-loke interface between the channel active layer and the semi-insulatning substrate. Good agreement between theoretical calculations and the experimental results is obtained.
3
A device model for an ion-implanted MESFET
G.W. Taylor, H. M. Darley, R.C. Frye et al. · IEEE Transactions on Electron Devices · 1979 · 91 citations
Device Modeling, Electrical Engineering, Ion Implantation +14