IEEE Transactions on Nuclear Science · 2000 · 40 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesDevice ReliabilityLight-emitting DiodesRadiation Damage In MaterialsRadiation HardeningRadiation-resistant MaterialsSemiconductor ReliabilityAging CharacterizationAnnealingDegradationDevice DegradationDoped SemiconductorsRadiation DamageRadiation EffectsWearout Mechanisms
Proton damage is investigated for several types of modern light-emitting diodes (LEDs), examining the damage from the standpoint of older models based on lifetime degradation as well as the simpler method of normalized degradation. An empirical model is developed to describe injection-enhanced annealing in amphoterically doped LEDs. Experimental results on "aged" devices show that wearout degradation does not decrease the sensitivity of devices to radiation damage.
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Semiconductor Lasers and Heterojunction LEDS
G.H.B. Thompson · Physics Bulletin · 1978 · 399 citations
Displacement damage in GaAs structures
G.P. Summers, E.A. Burke, M.A. Xapsos et al. · IEEE Transactions on Nuclear Science · 1988 · 101 citations