<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> stress measurements during thermal oxidation of silicon

Abstract

A two-beam laser reflection technique was used to measure SiO2 film stress during Si oxidation, i.e., in situ at the growth temperature. Results show a higher compressive intrinsic film stress near the Si–SiO2 interface and a lower stress in the bulk of the SiO2 film. Thermal stress is also measured by monitoring the SiO2 film covered Si substrate curvature changes during temperature excursions. Our new results are in general agreement with previous ex situ stress measurements and may indicate that film stress, being highest at the interface, influences the interface reaction in Si oxidation.