Journal of The Electrochemical Society · 2004 · 11 citations · 19 references
EngineeringMaterials EngineeringMaterials ScienceElectrochemistrySemiconductor DevicesSemiconductor MaterialsCharge Carrier TransportDiffusion In SolidsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSilicon MaterialsCharge Carrier DynamicsCharge State DeterminationCharge State DistributionsCharge-state FormationCzochralski GrowthPlasma Exposure EffectsSilicon CharacterizationSilicon Electrical Properties
Hydrogen was incorporated into p-type Czochralski silicon by hydrogen plasma exposure, and hydrogen-enhanced thermal donor formation was achieved. Posthydrogenation annealing treatment with and without electric field was carried out. Hydrogen diffusion after posthydrogenation annealing was investigated by spreading resistance measurements and diffusivities were determined. Direct evidence for the presence of the positive charge state of hydrogen in p-type silicon was established by the dependence of hydrogen diffusion on electric field. The conversion from neutral and positively charged hydrogen and into negatively charged hydrogen is discussed. © 2004 The Electrochemical Society. All rights reserved.
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Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
J. I. Pánkové, David Carlson, J. E. Berkeyheiser et al. · Physical Review Letters · 1983 · 455 citations