Metalorganic Vapor Phase Epitaxy of Sb-Doped ZnSe

Abstract

The Sb-doped ZnSe was grown on (100)GaAs substrate by using the Metalorganic Vapor Phase Epitaxy method in atmospheric pressure in order to obtain a p-type ZnSe film. The C-V measurement of the Sb-doped ZnSe layer suggests a p-type conduction. The maximum space charge concentration obtained was 1.5×10 16 cm -3 . The acceptor level of Sb, which was estimated from the photoluminescence spectrum, was found to be 69 meV.