K. Ando - Concepedia

Author

K. Ando

Tottori University

Also Known As

Ando, K., K. Ando, Koshi ANDO, Koshi Ando, Koshi Ando Koshi Ando

131

Publications

896

Citations

H-Index

Concepts

All Affiliations

Tottori University NTT (Japan)Toyota Technological Institute The University of Osaka Physique et Mécanique des Milieux Hétérogènes

About

K. Ando is an author at Tottori University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	626
2	Applied Physics	17	23	630
3	Electrical Engineering	14	16	402
4	Materials Engineering	2	2	56
5	Natural Sciences	1	1	35

K. Ando

Publications

658

Citations

H-Index

Page 1

	Year	Citations
Deep level analysis of radiation-induced defects in Si crystals and solar cells Masafumi Yamaguchi, Aurangzeb Khan, Stephen Taylor, Journal of Applied Physics EngineeringRadiation-induced DefectsDlts MeasurementsDefect ToleranceSilicon On Insulator	1999	59
Nonradiative-recombination-enhanced defect-structure transformation in low-temperature<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>γ</mml:mi></mml:math>-ray-irradiated InP K. Ando, Masafumi Yamaguchi, Chikao Uemura Physical review. B, Condensed matter SemiconductorsNonradiative-recombination-enhanced Defect-structure TransformationEngineeringPhysicsCrystalline Defects	1986	51
Recombination enhanced defect reactions in 1 MeV electron irradiated <i>p</i> InGaP Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin, Journal of Applied Physics EngineeringDefect ReactionsDirect RecombinationDefect ToleranceSemiconductors	2001	46
Nitrogen-doped p-type ZnSe films grown by MOVPE Akira Ohki, Noriyoshi Shibata, K. Ando, Journal of Crystal Growth Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringOxide Electronics	1988	40
The effect of oxygen on the properties of AlGaAs solar cells grown by molecular-beam epitaxy Chikara Amano, K. Ando, Masafumi Yamaguchi Journal of Applied Physics Materials ScienceAluminium NitrideElectrical EngineeringOxygen ConcentrationMolecular-beam Epitaxy	1988	39
Stable avalanche-photodiode operation of ZnSe-based p+–n structure blue-ultraviolet photodetectors H. Ishikura, Tomoki Abe, Nariyuki Fukuda, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsInitial Mbe GrowthEngineeringOptoelectronic Devices	2000	37
Resonant Brillouin scattering by amplified phonons in CdS K. Ando, Chihiro Hamaguchi Physical review. B, Solid state Ii-vi SemiconductorPhotonicsScattering Cross SectionEngineeringPhysics	1975	35
Comparison of the effects of electron and proton irradiation on n+–p–p+ silicon diodes Stephen Taylor, Makoto Yamaguchi, Tsutomu Yamaguchi, Journal of Applied Physics EngineeringIntegrated CircuitsProton IrradiationSemiconductor DeviceSemiconductors	1998	32
Deep hole trap properties of <i>p</i>-type ZnSe grown by molecular beam epitaxy K. Ando, Yoshihiro Kawaguchi, Takao Ohno, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringIi-vi SemiconductorEngineering	1993	28
Microscopic defect induced slow-mode degradation in II–VI based blue–green laser diodes Masahiro Adachi, Zaw Min Aung, Kouichirou Minami, Journal of Crystal Growth PhotonicsElectrical EngineeringPhotoluminescenceEngineeringLaser Science	2000	27

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