K. Ando

Deep level analysis of radiation-induced defects in Si crystals and solar cells

Masafumi Yamaguchi, Aurangzeb Khan, Stephen Taylor et al. · Journal of Applied Physics · 1999 · 59 citations

Engineering, Radiation-induced Defects, Dlts Measurements +19

Nonradiative-recombination-enhanced defect-structure transformation in low-temperature<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>γ</mml:mi></mml:math>-ray-irradiated InP

K. Ando, Masafumi Yamaguchi, Chikao Uemura · Physical review. B, Condensed matter · 1986 · 51 citations

Semiconductors, Nonradiative-recombination-enhanced Defect-structure Transformation, Engineering +13

Recombination enhanced defect reactions in 1 MeV electron irradiated <i>p</i> InGaP

Aurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin et al. · Journal of Applied Physics · 2001 · 46 citations

Engineering, Defect Reactions, Direct Recombination +19

Nitrogen-doped p-type ZnSe films grown by MOVPE

Akira Ohki, Noriyoshi Shibata, K. Ando et al. · Journal of Crystal Growth · 1988 · 40 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +5

The effect of oxygen on the properties of AlGaAs solar cells grown by molecular-beam epitaxy

Chikara Amano, K. Ando, Masafumi Yamaguchi · Journal of Applied Physics · 1988 · 39 citations

Materials Science, Aluminium Nitride, Electrical Engineering +11