Nonradiative-recombination-enhanced defect-structure transformation in low-temperature<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>γ</mml:mi></mml:math>-ray-irradiated InP

Abstract

Low-temperature $\ensuremath{\gamma}$-ray irradiation and subsequent minority-carrier injection are found to enhance a defect-structure transformation from a major irradiation-induced deep hole trap (${E}_{v}+0.32$eV) to a deeper hole-trap center (${E}_{v}+0.52$eV) in $p$-type InP. Direct experimental evidence is shown to demonstrate the role of the 0.32-eV level as an efficient nonradiative recombination center which competes with other radiative transition channels. The results show a recombination-enhanced reaction mechanism at the anion-displacement center with strong electron-phonon couplings.