Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition - Concepedia

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Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

13

Citations

13

References

1990

Year

Tsan‐sheng Hsu, B. Anthony, L. Breaux, Ruizhe Qian, Sanjay K. Banerjee, A.F. Tasch, C. W. Magee, William L. Harrington

Journal of Electronic Materials

Materials ScienceEngineeringC-305° CCrystalline DefectsApplied PhysicsThin Film DevicesDefect MicrostructureThin FilmsChemical Vapor DepositionThin Film Process TechnologyPlasma ProcessingThin Film Processing

References

	Year	Citations

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