physica status solidi (a) · 2004 · 18 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor SurfacesWide-bandgap SemiconductorsEpitaxial Growth Of Wide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsIn Situ CharacterizationReflectometrySubstrate Temperature EffectsTemperature-dependent GrowthThin Film Growth Monitoring
MOVPE growth of GaN/sapphire was studied with respect to growth control by using in situ reflectometry. The main requirements for reproducible growth were identified to be the control of the substrate temperature and the avoidance of parasitic deposition. This is accomplished by using emissivity corrected pyrometry to monitor the growth temperature and modeling to find flow parameters which lead to strongly reduced parasitic deposition. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)