Characterization of GaN-based p-channel device structures at elevated temperatures

Abstract

The interest in GaN for logic applications is increasing. With complementary logic architectures requiring the lowest power consumption, the need for GaN-based p-channel transistors is growing. Yet, the knowledge and the maturity of p-channel devices is far behind those of their n-channel counterparts. By analysing p-channel transistors with a high on/off ratio and a low subthreshold swing under elevated temperatures, we attempt to improve this situation. This is the first report on transistor operation at temperatures as high as 175 °C.