Applied Physics Letters · 1993 · 23 citations · 10 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsDiffusion In SolidsElectron DiffractionPhase TransitionsSemiconductor PhysicsSurface DiffusionSurface PhysicsCrystal Growth KineticsDiffusion KineticsEpitaxial Growth KineticsHomoepitaxial GrowthLow-temperature GrowthReflection High-energy Electron DiffractionThermal DiffusionThin-film Growth Kinetics
The homoepitaxial growth of Ge(111) has been investigated with reflection high-energy electron diffraction (RHEED) measurements supported by Monte Carlo simulations. At low temperatures, the RHEED oscillations show a monolayer period, while at higher temperatures the oscillation period becomes bilayer. The simulations reveal that a short-range nonthermal diffusion process is dominant at low temperatures, and that the driving force behind the transition to bilayer growth is the increasing importance of thermal diffusion.
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Surface X-Ray Scattering during Crystal Growth: Ge on Ge(111)
Elias Vlieg, A. W. Denier van der Gon, J. F. van der Veen et al. · Physical Review Letters · 1988 · 159 citations
Monolayer and bilayer growth on Ge(111) and Si(111)
J. Aarts, P.K. Larsen · Surface Science · 1987 · 67 citations