Molecular design of dopant precursors for atomic layer epitaxy of SrS:Ce

Abstract

Two cerium compounds, Ce{N[Si(CH 3 ) 3 ] 2 } 3 and Ce(tmhd) 4 (tmhd=2,2,6,6-tetramethylheptane-3,5-dionate), have been evaluated for utilization in the preparation of thin films of SrS:Ce by atomic layer epitaxy (ALE). The resultant coatings have been characterized for use in electroluminescent (EL) devices. The observed emission maximum at 518 nm for the devices derived from Ce(tmhd) 4 shifts to 480 nm for those resulting from Ce{N[Si(CH 3 ) 3 ] 2 } 3 . This shift may be correlated with the basicity of the ligand present on the dopant element.